GaAs/Ge solar cell AC parameters at different temperatures

Solar Energy Materials and Solar Cells

Volumn 77, Issue 2, 2003, Pages 145-153

  Anil Kumar, R ^a   Suresh, M S ^a   Nagaraju, J ^b  

^a INDIAN SPACE RESEARCH ORGANISATION   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

AC parameters; GaAs Ge solar cell; Temperature

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ENERGY GAP; PARAMETER ESTIMATION; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; THERMAL EFFECTS;

CELL DYNAMIC RESISTANCE;

SOLAR CELLS;

EID: 0037448133     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00316-1     Document Type: Article

References (8)

1. Anil Kumar R., Suresh M.S., Nagaraju J. Measurement of AC parameters of Gallium Arsenide (GaAs/Ge) solar cell by impedance spectroscopy. IEEE Trans. Electron Dev. 48(9):2001;2177-2179.
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5. R. Anil Kumar, Measurement of Solar cell AC parameters using impedance spectroscopy, M.S. Thesis, Indian Institute of Science, Bangalore, India, January 2000.
6. Anil Kumar R., Suresh M.S., Nagaraju J. Measurement and comparison silicon (BSR and BSFR) and Gallium Arsenide (GaAs/Ge) solar cell AC parameters. Sol. Energy Mater. Sol. cells. 60:2000;155-165.
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