Ellipsometric characterization of damage profiles using an advanced optical model

Journal of Applied Physics

Volumn 93, Issue 4, 2003, Pages 1987-1990

  Petrik, P ^a   Polgar O ^a   Fried, M ^a   Lohner, T ^a   Khanh N Q ^a   Gyulai, J ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELLIPSOMETRY; ION IMPLANTATION; OPTICAL RESOLVING POWER; SILICON;

BACKSCATTERING SPECTROMETRY;

SINGLE CRYSTALS;

EID: 0037442762     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1539306     Document Type: Article

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