Determination of nitrogen in silicon carbide by secondary ion mass spectrometry

Applied Surface Science

Volumn 203, Issue 204, 2003, Pages 184-188

  Ya Ber, B ^a   Kazantsev, D Y ^a   Kovarsky, A P ^a   Yafaev, R R ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Complex ions; HMR; N in SiC; SIMS

Indexed keywords

ION BEAMS; NEGATIVE IONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

COMPLEX IONS;

NITROGEN;

EID: 0037437844     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00732-8     Document Type: Article

References (8)

1. Rao M.V., Nordstrom D., Gardner J.A., Edwards A., Roth E.G., Kelner G., Rigdway M. Nucl. Instrum. Meth. Phys. Res. 127-128:1997;655-659.
2. Lossy R., Reichert W., Obermeier E. Mater. Sci. Eng. B. 46(1-3):1997;156-159.
3. Gardner J., Rao M.V., Holland O.W., Kelner G., Simons D.S., Chi P.H., Andrews J.N., Kretchmer J., Ghezzo M. J. Electron. Mater. 25(5):1996;885-892.
4. R.G. Wilson, F.A. Stive, Ch.W. Magee, Secondary ion mass spectrometry, in: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, Wiley, New York, 1989, p. 4.8-4.
5. A.F. Burenkov, F.F. Komarov, M.A. Kumahov, M.M. Temkin, Tables of space distribution of ion-implanted impurities, Bel. State University, Minsk, 1980 (in Russian).
6. L.V. Gurvich, G.V. Karachevtsev, V.N. Kondratev, U.A. Lebedev, V.A. Medvedev, V.K. Potapov, U.S. Hodeev, Breakdown Energy of Chemical Bonds, Ionization Potential and Electron Affinity, Science, Moscow, 1974, 351 pp. (in Russian).
7. Guryanov G.M., Kovarsky A.P. Sov. Phys. Tech. Phys. 28(7):1983;861-862.
8. R. Loesing, G.M. Guryanov, D.P. Griffis, in: Proceedings of the 11th Annual SIMS Workshop, Austin, TX, 10-13 May 1998.