Theory for slightly doped antiferromagnetic Mott insulators

Physical Review Letters

Volumn 90, Issue 6, 2003, Pages

  Lee, T K ^a,b   Ho, Chang Ming ^b   Nagaosa, Naoto ^c,d  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b NATIONAL CENTER FOR THEORETICAL SCIENCES   (Taiwan)

^c UNIVERSITY OF TOKYO   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; CHARGED PARTICLES; COPPER COMPOUNDS; DOPING (ADDITIVES); FERMI LEVEL; GROUND STATE; HAMILTONIANS; MONTE CARLO METHODS;

ANTIFERROMAGNETIC MOTT INSULATORS; QUASIPARTICLES; TRIAL WAVE FUNCTIONS;

PHYSICS;

EID: 0037435960     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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