Improving the growth of electron-doped Pr2 - x Cex CuO4 + δ thin films made by pulsed-laser deposition using excess CuO

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1340-1345

  Roberge, G ^a   Charpentier, S ^a   Godin Proulx, S ^a   Rauwel, P ^b   Truong, K D ^a   Fournier, P ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

A1. Defects; A1. Phase equilibria; A1. Purification; A3. Pulsed laser ablation epitaxy; B1. Cuprates; B2. Electron doped high Tc superconductors

Indexed keywords

CERIUM; CERIUM COMPOUNDS; COPPER COMPOUNDS; COPPER OXIDES; CRYSTAL GROWTH; DEFECTS; ELECTRONS; EPITAXIAL FILMS; LASER ABLATION; LASER APPLICATIONS; LASERS; PHASE EQUILIBRIA; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PURIFICATION; SEMICONDUCTOR DOPING; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY;

A1. DEFECTS; A1. PHASE EQUILIBRIA; A1. PURIFICATION; A3. PULSED-LASER ABLATION EPITAXY; B1. CUPRATES; B2. ELECTRON-DOPED HIGH-TC SUPERCONDUCTORS;

COPPER;

EID: 61349195845     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.017     Document Type: Article

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22. In our case, the trend as a function of temperature remains quite similar between the two types of films, except at low temperatures where we can observe a localization-like feature depending a lot on the amount of excess CuO. Thus, this low temperature feature is magnified by the presence of intergrowths.