Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 μm

Applied Physics Letters

Volumn 82, Issue 2, 2003, Pages 158-160

  Kim, Doo Gun ^a   Lee, Hee Hyun ^a   Choi, Woon Kyung ^a   Choi, Young Wan ^a   Lee, Seok ^b   Woo, Deok Ha ^b   Byun, Young Tae ^b   Kim, Jae Hun ^b   Kim, Sun Ho ^b   Nakano, Yoshiaki ^c  

^a Chung Ang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL THYRISTORS;

THYRISTORS;

EID: 0037434239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536711     Document Type: Article

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