Waveguide-type PnpN optical thyristor operating at 1.55 μm

IEEE Photonics Technology Letters

Volumn 12, Issue 9, 2000, Pages 1219-1221

  Kim, D G ^a   Lee, J J ^a   Choi, Y W ^a   Lee, S ^b   Kang, B K ^b   Kim, S H ^b   Futakuchi, N ^c   Nakano, Y ^c  

^a Chung Ang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMISSION; NONLINEAR OPTICS; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

OPTICAL THYRISTORS;

THYRISTORS;

EID: 0034266798     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.874241     Document Type: Article

References (11)

1. K. Hara, K. Kojima, K. Mitsunaga, and K. Kyuma, "AlGaAs-GaAs pnpn differential optical switch," in IEEE Quantum Electron., vol. 28, 1992, pp. 1335-1342.
2. M. Kuijk, P. L. Heremans, G. Borghs, and R. Vounckx, "Depleted double-heterojunction optical thyristor," Appl. Phys. Lett., vol. 64, no. 16, pp. 2073-2075, 1994.
3. P. Heremans, M. Kuijk, R. Vounckx, and G. Eorghs, "Differential optical PnpN switch operating at 16MHz with 250-fJ optical input enenrgy," Appl. Phys. Lett., vol. 65, no. 1, pp. 19-21, 1994.
4. G. Bickel, P. Heremans, M. Kuijk, R. Vounckx, and G. Borghs, "Receiver with optical thyristor operating at 155Mbit/s with 3femto-Joule optical inputs," Appl. Phys. Lett., vol. 70, no. 6, pp. 750-752, 1997.
5. J. H. Lee and Y. W. Choi, "Novel optical thyristors for free-space optical interconnectors," Opt. Eng., vol. 38, no. 3, pp. 531-536, 1999.
6. S. J. Kovacic, B. J. Robinson, J. G. Simmons, and D. A. Thompson, "InP/InGaAsP double-heterostructure optoelectronic switch," IEEE Electron Device Lett., vol. 14, no. 2, pp. 54-56, 1993.
7. S. J. Kovacic, B. J. Robinson, J. H. Swoger, J. G. Simmons, and D. A. Thompson, "Molecular-beam epitaxially grown InP/InGaAsP heterostructure for inversion-channel devices," J. Vac. Sci. Technol. B, vol. 11.no. 3, pp. 979-981, 1993.
8. J. H. Swoger, C. Qiu, J. G. Simmons, D. A. Thompson, F. Shepherd, D. Beckett, and M. Cleroux, "Strained layer(1.5 μm) InP/InGaAsP lasing opto-electronic switch (LOES)," IEEE Photon. Technol. Lett., vol. 6, pp. 927-929, 1994.
9. J. K. Choi, J. H. Lee, T. G. Kang, D. G. Kim, and Y. W. Choi, "Design of 1.55 μ fully-depleted InGaAsP/InP optical thyristors for optical communication systems," Proc. SPIE, Optoelectron. Interconnects VII, vol. 3625, pp. 747-755, 1999.
10. M. Kurata, Numerical Analysis of Semiconductor Device. Lexington, MA: Lexington Books, 1982.
11. J. J. Lee, D. G. Kim, J. K. Choi, Y. W. Choi, S. Y. Han, S. Lee, S. H. Kim, Y. Nakano, and N. Futakuchi, "Performance analysis of waveguide-type InGaAsP/InP fully-depleted optical thyristor for optical communication system," Proc. SPIE, vol. 3944, 2000.