Fractional quantum hall effect of composite fermions

Physical Review Letters

Volumn 90, Issue 1, 2003, Pages

  Pan, W ^a,b   Stormer, H L ^c,d   Tsui, D C ^a   Pfeiffer, L N ^d   Baldwin, K W ^d   West, K W ^d  

^a Princeton University   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

^c Columbia University ^*  (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; HALL EFFECT; HOLE TRAPS; MAGNETIC FIELDS; POLARIZATION; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

COMPOSITE FERMIONS; FRACTIONAL QUANTUM HALL EFFECT; SPIN POLARIZATION;

FERMIONS;

EID: 0037428597     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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