Spontaneous correlation of crystallographic orientations in crystallite aggregation: Physical origin and its influence on pattern formation

Journal of Physical Chemistry B

Volumn 107, Issue 1, 2003, Pages 96-101

  Li, Da Wei ^a   Wang, Mu ^a   Liu, Peng ^b   Peng, Ru Wen ^a   Ming, Nai Ben ^a  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANISOTROPY; ATOMIC FORCE MICROSCOPY; CORRELATION THEORY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; FRACTALS; NUCLEATION; PATTERN MATCHING; SURFACE TENSION; X RAY DIFFRACTION ANALYSIS;

FRACTAL PATTERNS;

CRYSTALLINE MATERIALS;

EID: 0037426927     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp026615v     Document Type: Article

References (33)

1. Pimpinelli, A.; Villain, J. Physics of Crystal Growth; Cambridge University Press: Cambridge, 1998.
2. Murry, C. B.; Kagan, C. R.; Bawendi, M. G. Science 1995, 270, 1335.
3. V. A. Shchukin et al., Phys. Rev. Lett. 1995, 75, 2968.
4. Tersoff, J.;, Teichert, C.; Lagally, M. G. Phys. Rev. Lett. 1996, 76, 1675 and references therein.
5. Eaglesham, D. J.; Cerullo, M. Phys. Rev. Lett. 1990, 64, 1943.
6. Politi, P.; et al. Phys. Rep. 2000, 324, 271 and references therein.
7. Berrehar, J.; et al. Phys. Rev. B 1992, 46, 13487.
8. Müller, J. Ph. D thesis, McGill University, Montreal, 1998.
9. Asaro, R. J.; Tiller, W. A. Metall. Trans. 1972, 3, 1789.
10. Grinfeld, M. A. Sov. Phys. Dokl. 1986, 31, 831.
11. Keith, H. D.; Padden, F. J., Jr. J. Appl. Phys. 1963, 34, 2409.
12. Singfield, K. L.; Hobbs, J. K.; Keller, A. J. Cryst. Growth 1998, 183, 683.
13. Hutter, J. L.; Bechhoefer, J. J. Cryst. Growth 2000, 217, 332.
14. Bisault, J.; Ryschenkow, G.; Faivre, G. J. Cryst. Growth 1988, 87, 221.
15. Matsuno, T.; Koishi, M. J. Cryst. Growth 1989, 94, 798.
16. Tracy, S. L.; Francois, C. J. P.; Jennings, H. M. J. Cryst. Growth 1998, 193, 374.
17. Wang, M.; et al. Phys. Rev. Lett. 1998, 80, 3089.
18. Liu, X. Y.; et al. J. Cryst. Growth 2000, 208, 687.
19. Strom, C. S.; Liu, X. Y.; Wang, M. J. Phys. Chem. B 2000, 104, 9638.
20. Li, D. W.; Wang, M. To be published.
21. Klug, H.; Alexandev, L. X-ray Diffraction Procedures for poly Crystalline and Amorphous Materials, 2nd ed.; Wiley: New York, 1974.
22. Before carrying out computer simulation, we first determine the coordinates of the center of each elongated diffraction spot in the experimental diffraction pattern. The orientation of a crystallite is characterized by Euler angles θ, φ, and ψ. In calculation the wavelength of X-ray is set between 0.7 and 2.2 Å. θ, φ and ψ are changed with a step of 2 mRod. This step size corresponds to a linear separation of about 50 microns in the diffraction spectrum in our experiment. At each step the diffraction pattern is calculated and compared with the experimental data. Once a bestfit combination of θ, φ, and ψ is found, we continue to determine the axis of the orientation rotation and the degree that the crystallite has been rotated in a similar way. If the computed direction of the spot elongation is in agreement with the experimental observation, we conclude that the correct axis of rotation has been found. It is noteworthy that the noise-to-signal ratio in our experiments is not high, so many high-indexed diffraction spots cannot be identified. As a matter of fact, the analysis of the diffraction spots on the image plate shows that the diffraction coming from hkl > 2 is so weak that those spots are virtually not seen. For this reason we only consider hkl ≤ 2in the computer calculation.
23. →, respectively.
24. Hartman, P. Acta Crystallogr. 1958, 11, 365.
25. Bennema, P. In Handbook of Crystal Growth; Hurle, D. T. J., Ed.; Elsevier: New York, 1993; Vol. 1a.
26. Chan, S. K.; Reimer, H.-H.; Kahlweit, M. J. Cryst. Growth 1976, 32, 303.
27. When the supersaturation is higher than 0.2, it has been found 〈111〉 is the fast growth direction. See ref 26 for details.
28. Ming, N.-B. Fundamentals of Crystal Growth Physics; Shanghai Science and Technology, Shanghai, 1982; Chapter 8.
29. Chernov, A. A.; Modern Crystallography III: Crystal Growth, Springer-Verlag: Berlin, 1984.
30. Winkler, B.; et al. J. Phys.: Condens. Matter 2000, 12, 2093.
31. Ming, N.-B.; Wang, M. Peng, R.-W. Phys. Rev. E 1993, 48, 621.
32. Liu, X. Y. J. Cryst. Growth 2002, 237-239, 101.
33. Liu, X. Y. J. Cryst. Growth 2002, 237-239, 106.