LiF/Al bilayer source and drain electrodes for n-channel organic field-effect transistors

Synthetic Metals

Volumn 137, Issue 1-3, 2003, Pages 953-954

  Hoshino, Satoshi ^a   Nagamatsu, Shuichi ^a   Chikamatsu, Masayuki ^a   Misaki, Masahiro ^a   Yoshida, Yuji ^a   Tanigaki, Nobutaka ^a   Yase, Kiyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Field effect transistors; Metal semiconductor interfaces; Organic semiconductors based on conjugated molecules

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRODES; FIELD EFFECT TRANSISTORS; LITHIUM COMPOUNDS; ULTRATHIN FILMS;

DRAIN ELECTRODES;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0037419438     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)00945-1     Document Type: Conference Paper

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