Phase-field modelling of excimer laser lateral crystallization of silicon thin films

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 309-313

  Burtsev, A ^a   Apel, M ^b   Ishihara, R ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ACCESS E V   (Germany)

Author keywords

Excimer laser; Lateral growth; Phase field model; Spontaneous nucleation; Supercooling

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); PHASE TRANSITIONS; SILICON; THERMODYNAMIC PROPERTIES;

GROWTH VELOCITY;

THIN FILMS;

EID: 0037416537     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01160-4     Document Type: Conference Paper

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