Simulation of lateral grain growth at excimer-laser crystallization of amorphous silicon films

Russian Microelectronics

Volumn 26, Issue 2, 1997, Pages 113-118

  Limanov, A B ^a  

^a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012656096     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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2. Im, J.S. and Spolisi, R.S., Crystalline Si Films for Integrated Active-Matrix Liquid-Crystal Displays, Mater. Res. Soc. Bull., 1996, vol. 21, no. 3, pp. 39-48.
3. Im, J.S. and Kim, H.J., On the Super Lateral Growth Phenomenon Observed in Excimer Laser-induced Crystallization of Thin Si Films, Appl. Phys. Lett., 1994, vol. 64, no. 17, pp. 2303-2305.
4. Im, J.S., Kim, H.J., and Thompson, M.O., Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films, Appl. Phys. Lett., 1993, vol. 63, no. 14, pp. 1969-1971.
5. Balandin, V.Yu, Kulyasova, O.A., Dvurechenskii, A.V., et al., Simulation of Temperature and Elastic Fields and Phase Transitions in SOI Structures Formed by Pulse Heating, Phys. Status Solidi A, 1991, vol. 123, pp. 415-430.
6. Gupta, V.V., Song, H.J., and Im, J.S., Nonequilibrium Two-Dimensional Model of Excimer Laser Melting and Solidification of Thin Si Films, Abstracts of MRS Fall Meeting 1995, 1995, no. B12.21.
7. Stiffler, S.R., Evans, P.V., and Greer, A.L., Interfacial Transport Kinetics during the Solidification of Silicon, Acta Metall. Mater., 1992, vol. 40, no. 7, pp. 1617-1622.
8. Yablonovich, E. and Gmitter, T., Wetting Angles and Surface Tension in the Crystallization of Thin Liquid Films, J. Electrochem. Soc., 1984, vol. 131, no. 11, pp. 2625-2630.
9. Jaccodine, R.J., Surface Energy of Germanium and Silicon, J. Electrochem. Soc., 1963, vol. 110, no. 6, pp. 524-527.
10. Hardy, S.C., The Surface Tension of Liquid Silicon, J. Cryst. Growth, 1984, vol. 69, pp. 456-460.
11. Evans, P.V. and Stiffler, S.R., Interfacial Atomic Transport in the Nucleation of Crystalline Silicon from the Melt, Acta Metall. Mater., 1991, vol. 39, no. 11, pp. 2727-2731.
12. Weinberg, Z.A., Deline, V.R., Sedgwick, T.O., et al., Investigation of the Silicon Beading Phenomena during Zone-Melting Recrystallization, Appl. Phys. Lett., 1983, vol. 43, no. 12, pp. 1105-1107.