Novel flash memory device with SPlit gate source side Injection and ONO charge storage stack (SPIN)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 63-64

  Chen, Wei Ming ^a   Swift, Craig ^a   Roberts, Doug ^a   Forbes, Keith ^a   Higman, Jack ^a   Maiti, Bikas ^a   Paulson, Wayne ^a   Chang, Kuo Tung ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; ELECTRON TUNNELING; GATES (TRANSISTOR); MICROPROGRAMMING;

CHARGE STORAGE STACK; HIGH DENSITY FLASH MEMORY; OXIDE NITRIDE OXIDE (ONO) STACKS;

SEMICONDUCTOR STORAGE;

EID: 0030715835     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)