Structural properties of CdO layers grown on GaAs (0 0 1) substrates by metalorganic molecular beam epitaxy

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 219-225

  Kim, Bong Joong ^a   Ok, Y W ^a   Seong, T Y ^a   Ashrafi, A B M A ^b   Kumano, H ^b   Suemune, I ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A1. Defects; A3. Metalorganic molecular beam epitaxy; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; ELECTRON DIFFRACTION; PHOTOVOLTAIC EFFECTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

TRANSMISSION ELECTRON DIFFRACTION (TED);

MOLECULAR BEAM EPITAXY;

EID: 0037401392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02521-6     Document Type: Article

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