Electron energy-loss near edge structure (ELNES) of InGaN quantum wells

Journal of Microscopy

Volumn 210, Issue 1, 2003, Pages 89-93

  Keast, V J ^a   Kappers, M J ^b   Humphreys, C J ^b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; IONIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON ENERGY LOSS NEAR EDGE STRUCTURE; ELECTRON ENERGY-LOSS SPECTRA; ELECTRONIC.STRUCTURE; FINE STRUCTURES; GREEN REGIONS; INGAN QUANTUM WELLS; LIGHTEMITTING DIODE; QUANTUM WELL STRUCTURES; QUANTUM-WELLS;

DISSOCIATION;

CALCULATION; CHEMICAL STRUCTURE; CONFERENCE PAPER; ELECTRON ENERGY LOSS SPECTROSCOPY; IONIZATION; LASER; LIGHT EMITTING DIODE; PRIORITY JOURNAL; QUANTUM CHEMISTRY;

EID: 0037395246     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2003.01180.x     Document Type: Conference Paper

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