Doping into one-dimensional dangling-bond bands of natural quantum-wire-like Ga2Se3 semiconductors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 185-186

  Ishikawa, M ^a   Nakayama, T ^b  

^a Yokogawa Electronics   (Japan)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

First principles calculation; n type doping; Nano structure; p type doping; Quantum wire

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); NANOSTRUCTURED MATERIALS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES;

DOPANTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037393293     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00757-9     Document Type: Conference Paper

References (4)

1. Ishikawa M.et al. Phys. Low Dimens. Struct. 11:1997;95.
2. Nakayama T.et al. J. Phys. Soc. Japan. 66:1997;3887.
3. Ohmura K.et al. J. Phys. Soc. Japan. 69:2000;3860.
4. Ishikawa M.et al. Phys. Stat. Sol. B. 229:2001;301.