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Volumn 66, Issue 12, 1997, Pages 3887-3892

Bonding and Optical Anisotropy of Vacancy-Ordered Ga2Se3

Author keywords

ab initio calculation; Anisotropy; Bond relaxation; Dielectric function; Electronic structure; Ga2Se3; Vacancy ordering

Indexed keywords


EID: 0031330601     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.66.3887     Document Type: Article
Times cited : (24)

References (28)
  • 9
    • 0642340152 scopus 로고    scopus 로고
    • Dr. Thesis, Faculty of Engineering, Tokyo Institute of Technology, Tokyo
    • T. Hanada: Dr. Thesis, Faculty of Engineering, Tokyo Institute of Technology, Tokyo, 1997.
    • (1997)
    • Hanada, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.