Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 247-251

  Maia, F F ^a   Freire, J A K ^a   Farias, G A ^a   Freire, V N ^a   da Silva, E F ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

Binding energy; Interface fluctuations; Quantum well; Strain effects

Indexed keywords

BINDING ENERGY; ENERGY GAP; EXCITONS; HAMILTONIANS; INTERFACES (MATERIALS); LATTICE CONSTANTS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

EXCITON ENERGY BROADENING; INTERFACE FLUCTUATIONS;

SURFACE ROUGHNESS;

EID: 0037042038     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00856-X     Document Type: Article

References (13)