Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 143-146

  Hackens, B ^a   Faniel, S ^a   Delfosse, F ^a   Gustin, C ^a   Boutry, H ^a   Huynen, I ^a   Wallart, X ^b   Bollaert, S ^b   Cappy, A ^b   Bayot, V ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Ballistic effects; Dephasing; Quantum dots

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

DEPHASING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037391541     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00713-0     Document Type: Conference Paper

References (11)

1. Song A.M., Omling P., Samuelson L., Seifert W., Shorubalko I., Zirath H. Appl. Phys. Lett. 79:2001;1357.
2. Huibers A.G.et al. Phys. Rev. Lett. 81:1998;200.
3. van Son P.C., van Kempen H., Wyder P. Phys. Rev. Lett. 58:1987;1567 Heremans J., Fuller B.K., Thrush C.M., Partin D.L. Phys. Rev. B. 52:1995;5767.
4. van Son P.C., van Kempen H., Wyder P. Phys. Rev. Lett. 58:1987;1567 Heremans J., Fuller B.K., Thrush C.M., Partin D.L. Phys. Rev. B. 52:1995;5767.
5. Hirayama Y., Tarucha S. Appl. Phys. Lett. 63:1993;2366.
6. Heremans J.et al. Phys. Rev. B. 54:1996;2685.
7. Brouwer P.et al. Phys. Rev. B. 65:2002;081302 Frahm K. Europhys. Lett. 30:1995;457.
8. Brouwer P.et al. Phys. Rev. B. 65:2002;081302 Frahm K. Europhys. Lett. 30:1995;457.
9. B. Hackens, et al., Phys. Rev. B (k), in press.
10. Altshuler B.L., Aronov A.G., Khmelnitzky D.E. J. Phys. C. 15:1982;7367 Choi K.K., Tsui D.C., Alavi K. Phys. Rev. B. 36:1987;7751.
11. Altshuler B.L., Aronov A.G., Khmelnitzky D.E. J. Phys. C. 15:1982;7367 Choi K.K., Tsui D.C., Alavi K. Phys. Rev. B. 36:1987;7751.