Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operation

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 800-803

  Lee, H J ^a   Fujiwara, A ^a   Imada, A ^a   Asahi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; WAVELENGTH DIVISION MULTIPLEXING; X RAY DIFFRACTION ANALYSIS;

ROOM TEMPERATURE OPERATIONS;

THALLIUM COMPOUNDS;

EID: 0037382127     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02386-2     Document Type: Conference Paper

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