Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors

Microelectronics Reliability

Volumn 43, Issue 4, 2003, Pages 671-674

  Hastas, N A ^a   Dimitriadis, C A ^a   Farmakis, F V ^a   Kamarinos, G ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGENATION; LEAKAGE CURRENTS; PASSIVATION; PLASMA DEVICES; POLYSILICON;

DONOR TYPE TRAP STATES;

THIN FILM TRANSISTORS;

EID: 0037380449     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00351-7     Document Type: Article

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