Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices

Sensors and Actuators, B: Chemical

Volumn 89, Issue 1-2, 2003, Pages 1-8

  Åbom, A Elisabeth ^a   Comini, Elisabetta ^b   Sberveglieri, Giorgio ^b   Finnegan, Nancy ^c   Petrov, Ivan ^c   Hultman, Lars ^a   Erikssion, Mats ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF BRESCIA   (Italy)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Ammonia; Field effect chemical sensors; Pt; SiO2

Indexed keywords

AMMONIA; CHEMICAL SENSORS; FIELD EFFECT SEMICONDUCTOR DEVICES; METALLIC FILMS; MORPHOLOGY; OXIDATION; SPUTTER DEPOSITION; SURFACE STRUCTURE; THERMAL EFFECTS;

METAL-INSULATOR-SEMICONDUCTOR (MIS) FIELD-EFFECT SENSORS;

DISSOCIATION;

EID: 0037332602     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(02)00400-8     Document Type: Article

References (18)

1. Ekedahl L., Eriksson M., Lundström I. Hydrogen sensing mechanism of metal-insulator interfaces. Acc. Chem. Res. 31:1998;249-256.
2. 3 on Pt(1 1 1): intermediate species and reaction mechanisms. Surf. Sci. 322:1995;151.
3. Fahmi A., van Santen A. Density functional study of water and ammonia activation by platinum. Zeitschrift für Physikalische Chem., Bd. 197:1996;203-217.
4. Fogelberg J., Lundström I., Petersson L.-G. Ammonia dissociation on oxygen covered palladium studied with a hydrogen sensitive Pd-MOS device. Physica Scripta. 35:1987;702.
5. Spetz A., Armgarth M., Lundström I. Hydrogen and ammonia response of metal-silicon dioxide-silicon structures with thin platinum gates. J. Appl. Phys. 64(3):1988;1274-1283.
6. Lundström I., Armgarth M., Petersson L.G. Physics with catalytic metal gate chemical sensors. CRC Crit. Rev. Solid State Mater. Sci. 15:1989;210-278.
7. Ross J.F., Robbins I., Webb B.C. The ammonia sensitivity of platinum-gate MOSFET devices: Dependence on gate electrode morphology. Sens. Actuators. 11:1987;73-90.
8. Löfdahl M., Utaiwasin C., Carlsson A., Lundström I., Eriksson M. Gas response dependence on gate metal morphology of field-effect devices. Sens. Actuators B. 80:2001;183-192.
9. A. Sibbald, B.C. Webb, I. Robins, J.F. Ross, E. Bell, US Patent 4,931,851 (1990).
10. M. Löfdahl, Spatially resolved gas sensing, Ph.D. Thesis, Linköping University, Linköping, 2001.
11. Doolittle L.R. Algorithms for the rapid simulation of Rutherford backscattering spectra. Nucl. Instrum. Methods Phys. Res. B9:1985;344.
12. D.B. Williams, C. Barry Carter, Transmission electron microscopy, A Textbook for Materials Science, Plenum Press, New York, 1996, p. 148.
13. 2 gas mixtures. J. Mater. Res. 14(4):1999;1255-1260.
14. S. Hofmann, J.M. Sanz, Quantification of preferential sputtering and contamination overlayer effects in AES sputter profiling, Surf. Interf. Anal. 6 (2) (1984) 78-81.
15. Kester D., Messier R. Predicting negative ion resputtering in thin films. J. Vac. Sci. Technol. A. 4(3):1986;496-499.
16. Abe Y., Kawamura M., Sasaki K. Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films. J. Vac. Sci. Technol. A. 18(5):2000;2608-2612.
17. 2 thin films by reactive sputtering and their electrical properties. Jpn. J. Appl. Phys. 38:1999;2092-2096.
18. Åbom A.E., Comini E., Sberveglieri G., Hultman L., Eriksson M. Thin oxide films as surface modifiers of MIS field effect gas sensors. Sens. Actuators B. 85(1-2):2002;109-119.