Electroluminescence and lasing properties of highly Bi-doped PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure

Journal of Electronic Materials

Volumn 32, Issue 2, 2003, Pages 39-42

  Tamura, Wataru ^a   Yasuda, Arata ^a   Suto, Ken ^a   Itoh, Osamu ^b   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Bi doped; Laser operation; PbTe

Indexed keywords

BISMUTH; DOPING (ADDITIVES); ELECTROLUMINESCENCE; HALL EFFECT; HETEROJUNCTIONS; LASERS; LIQUID PHASE EPITAXY; SEMICONDUCTOR LASERS; VAPOR PRESSURE;

TEMPERATURE DIFFERENCE METHOD (TDM);

LEAD COMPOUNDS;

EID: 0037329029     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0235-7     Document Type: Article

References (13)

1. C. Roller, K. Namjou, J. Jeffers, W. Potter, P.J. McCann, and J. Grego, Opt. Lett. 27, 107 (2002).
2. A.J. Strauss, J. Electron. Mater. 2, 553 (1973).
3. T.C. Harman, J. Nonmet. 1, 183 (1973).
4. Y. Horikoshi, Semiconductors and Semimetals, Vol. 22c, ed. W.T. Tsang (New York: Academic Press, 1985), p. 19.
5. A. Prinz, G. Brunthaler, Y. Ueta, G. Springholz, and G. 12Bauer, Phys. Rev. B. 59, 12983 (1999).
6. W. Tamura, A. Yasuda, K. Suto, M. Hosokawa, O. Itoh, and J. Nishizawa, submitted to J. Electron. Mater.
7. J. Nishizawa and Y. Okuno, IEEE Trans. Electron. Dev. ED-22, 716 (1975).
8. J. Nishizawa, Y. Okuno, and K. Suto, Japan Annual Reports in Electronics, Computers & Telecommunications (JARECT), Vol. 19, Semiconductor Technologies, ed. J. Nishizawa (Tokyo: Ohmsha Ltd. and North-Holland, 1986), p. 17.
9. J. Nishizawa and Y. Oyama, Mater. Sci. Eng. R121, 273 (1994).
10. W. Tamura, O. Itoh, Nugraha, K. Suto, and J. Nishizawa, J. Electron. Mater. 28, 907 (1999).
11. H. Preier, Appl. Phys. 20, 189 (1979).
12. S. Nishi, H. Kawamura, and K. Murase, Phys. Status Solidi (b) 97, 581 (1980).
13. Nugraha, O. Itoh, K. Suto, and J. Nishizawa, J. Cryst. Growth 163, 353 (1996).