From SEM cross-section to TEM sample - New capabilities of FIB sample preparation by "refill" technique;Voto REM-querschnitt zur TEM-probe - Neue möglichkeiten für FIB-probenpräparation mittels "refill"-technik

Praktische Metallographie/Practical Metallography

Volumn 40, Issue 2, 2003, Pages 78-84

  Engelmann, Hans Jürgen ^a   Volkmann, Beate ^a   Zschech, Ehrenfried ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ION BEAMS; SCANNING ELECTRON MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS (FIB);

SEMICONDUCTOR DEVICES;

NEAR SURFACES; PREPARATION TECHNIQUE; SAMPLE PREPARATION; SEM IMAGING; SPATIAL RESOLUTION; SURFACE AMORPHIZATION; TEM SAMPLE PREPARATION;

EID: 0037325578     PISSN: 0032678X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Spolenak, R.; Heiland, B.; Witt, C.; Keller, R.M.; Müller, P.; Arzt, E.: Praktische Metallographie, Sonderband 30 (1999) 229-236
2. Engelmann, H.J.; Volkmann, B.; Zschech, E.: Fortschritte der Metallographie, Vol. 31, G. Schneider, F. Mücklich Eds., Werkstoff-Informationsgesellschaft, Frankfurt, 2000, 193-198
3. Mühle, U.; Wiesner, A.; Schray, S.: Microelectronics Reliability 38 (1998) 895-899
4. Engelmann, H.J.; Volkmann, B.; Zschech, E.: Patentanmeldung, DE 100 46 041.5 vom 12.09.2000
5. Bender, H.: Microscopy of Semiconducting Materials 1999, A,G. Cullis, R. Beanland eds., IPC Series #164, IOP Publishing Ltd., 1999