1.5-μm intraband transitions in PbSe quantum dots

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 2 A, 2003, Pages

  Okuno, Tsuyoshi ^a   Ikezawa, Michio ^a   Masumoto, Yasuaki ^a   Hayes, Gary R ^b   Deveaud, Benoit ^b   Lipovskii, Andrey A ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b EPFL   (Switzerland)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

Induced absorption; Intraband transitions; PbSe; Pump probe measurement; Quantum dots; Strong confinement

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; LIGHT ABSORPTION; OPTICAL PUMPING; RELAXATION PROCESSES; SEMICONDUCTING LEAD COMPOUNDS;

BROAD SPECTRAL RANGE; INTRABAND TRANSITION; LEAD SELLENIDE; PHOTOEXCITED CARRIERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037320620     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L123     Document Type: Letter

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18. This width is still broader than the case of 2-dimensional wells. For example, ZnSe quantum wells in ref. 16) show the photoinduced intraband transition around ∼0.6 eV with width of less than 0.1 eV.