-
1
-
-
0000943655
-
-
D. J. Norris, A. L. Efros, M. Rosen, and M. G. Bawendi, Phys. Rev. B 53, 16347 (1996).
-
(1996)
Phys. Rev. B
, vol.53
, pp. 16347
-
-
Norris, D.J.1
Efros, A.L.2
Rosen, M.3
Bawendi, M.G.4
-
9
-
-
0000761117
-
-
A. Lipovskii, E. Kolobkova, V. Petrikov, I. Kang, A. Olkhovets, T. Krauss, M. Thomas, S. Silcox, F. Wise, Q. Shen, and S. Kycia, Appl. Phys. Lett. 71, 3406 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 3406
-
-
Lipovskii, A.1
Kolobkova, E.2
Petrikov, V.3
Kang, I.4
Olkhovets, A.5
Krauss, T.6
Thomas, M.7
Silcox, S.8
Wise, F.9
Shen, Q.10
Kycia, S.11
-
10
-
-
0030230822
-
-
C. Ricolleau, M. Gandais, T. Gacoin, and J. P. Boilot, J. Cryst. Growth 166, 769 (1996).
-
(1996)
J. Cryst. Growth
, vol.166
, pp. 769
-
-
Ricolleau, C.1
Gandais, M.2
Gacoin, T.3
Boilot, J.P.4
-
11
-
-
0001087593
-
-
S. B. Qadri, J. Yang, B. R. Ratna, E. F. Skelton, and J. Z. Hu, Appl. Phys. Lett. 69, 2205 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 2205
-
-
Qadri, S.B.1
Yang, J.2
Ratna, B.R.3
Skelton, E.F.4
Hu, J.Z.5
-
13
-
-
85037485881
-
-
Osaka, Japan, 23-27 August unpublished
-
T. Okuno, A. A. Lipovskii, T. Ogawa, I. Amagai, and Y. Masumoto. Strong Confinement of PbSe and PbS Quantum Dots, International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99), Osaka, Japan, 23-27 August 1999 (unpublished).
-
(1999)
Strong Confinement of PbSe and PbS Quantum Dots, International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99)
-
-
Okuno, T.1
Lipovskii, A.A.2
Ogawa, T.3
Amagai, I.4
Masumoto, Y.5
-
14
-
-
0031233153
-
-
P. T. Guerreiro, S. Ten, N. F. Borrelli, J. Butty, G. E. Jabbour, and N. Peyghambarian, Appl. Phys. Lett. 71, 1595 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 1595
-
-
Guerreiro, P.T.1
Ten, S.2
Borrelli, N.F.3
Butty, J.4
Jabbour, G.E.5
Peyghambarian, N.6
-
15
-
-
0001788616
-
-
K. Wundke, S. Potting, J. Auxier, A. Schulzgen, N. Peyghambarian, and N. F. Borrelli, Appl. Phys. Lett. 76, 10 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 10
-
-
Wundke, K.1
Potting, S.2
Auxier, J.3
Schulzgen, A.4
Peyghambarian, N.5
Borrelli, N.F.6
-
16
-
-
85037483697
-
-
accepted
-
A. M. Malyarevich, I. A. Denisov, N. N. Posnov, V. G. Savitsky, K. V. Yumashev, and A. A. Lipovskii, Appl. Opt. (accepted).
-
Appl. Opt.
-
-
Malyarevich, A.M.1
Denisov, I.A.2
Posnov, N.N.3
Savitsky, V.G.4
Yumashev, K.V.5
Lipovskii, A.A.6
-
23
-
-
85037459583
-
-
Generally, the infinite barrier approximation is not a very good one since the absorption edge of the used glass is about 350 nm, corresponding to an energy of ∼3.5 eV. Additionally, the finite height of the potential barrier for the carriers localized in semiconductor QDs have to be accounted for
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Generally, the infinite barrier approximation is not a very good one since the absorption edge of the used glass is about 350 nm, corresponding to an energy of ∼3.5 eV. Additionally, the finite height of the potential barrier for the carriers localized in semiconductor QDs have to be accounted for.
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