Generation lifetime improvement on MOS capacitor by fast neutron enhanced intrinsic gettering technique

Microelectronics Journal

Volumn 34, Issue 2, 2003, Pages 127-131

  Uen, Wu Yih ^a   Lan, Shan Ming ^b   Liao, Sen Mao ^a   Chiou, Jing Ting ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

Czochralski Si; Fast neutron irradiation; Intrinsic gettering; Minority carrier generation lifetime; MOS capacitors

Indexed keywords

ANNEALING; CHARGE CARRIERS; NEUTRON IRRADIATION; SILICON WAFERS;

INTRINSIC GETTERING;

MOS CAPACITORS;

EID: 0037304119     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00152-0     Document Type: Article

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