Avoided level crossing measurements of electric field enhanced diamagnetic states in gallium arsenide

Physica B: Condensed Matter

Volumn 326, Issue 1-4, 2003, Pages 157-159

  Chow, K H ^a   Hitti, B ^b   Eshchenko, D G ^c,d,e   Storchak, V G ^f   Kreitzman, S R ^b   Brewer, J H ^g  

^a UNIVERSITY OF ALBERTA   (Canada)

^b TRIUMF   (Canada)

^c UNIVERSITY OF ZURICH   (Switzerland)

^d PAUL SCHERRER INSTITUTE   (Switzerland)

^e INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^f KURCHATOV INSTITUTE   (Russian Federation)

^g UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Avoided level crossing; Electric field; GaAs; Muonium; Semiconductors

Indexed keywords

ELECTRIC FIELD EFFECTS; IMPURITIES; MAGNETIC FIELDS; SPECTROSCOPIC ANALYSIS;

AVOIDED LEVEL CROSSING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037303841     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01588-0     Document Type: Article

References (6)

1. Chow K.H., Hitti B., Kiefl R.F. Stavola M. Identification of Defects in Semiconductors. 1998;137 Academic Press, Boston.
2. K.H. Chow, Isolated positively charged muonium and the analog of hydrogen passivation, Physica B, these proceedings.
3. D.G. Eshchenko, V.G. Storchak, R.L. Lichti, J.H. Brewer, Short range electron transport in GaAs, Physica B, these proceedings.
4. Eshchenko D.G., Storchak V.G., Morris G.D. Phys. Lett. A. 264:1999;226.
5. Kiefl R.F.et al. Phys. Rev. B. 32:1985;530.
6. Chow K.H.et al. Phys. Rev. B. 51:1995;14 762.