Polymer residue chemical composition analysis and its effect on via contact resistance in dual damascene copper interconnects process integration

Microelectronics Journal

Volumn 34, Issue 2, 2003, Pages 109-113

  Zheng, Y S ^a   Guo, Q ^a   Su, Y J ^a   Foo, P D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Copper damage; Copper interconnection; Dual damascene; Electrical characteristic evaluation; Polymer residue; Polymer residue elimination

Indexed keywords

COMPOSITION; COPPER; DRY ETCHING; ELECTRIC CONNECTORS; ELECTRIC RESISTANCE; PLASMA ETCHING; POLYMERS;

COPPER INTERCONNECTS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0037302025     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00154-4     Document Type: Article

References (4)

1. Itoh M., Ishii Y., Jinbo T., Akimori H., Futase T., Saeki T. The cleaning at a back surface and edge of a wafer for introducing Cu metallization process. IEEE Transactions on Semiconductor Manufacturing. 13:(3):2000;300-304.
2. Archer L., Henry S.-A., America S.E.Z., Kanto D.N. Removing postash polymer residue from BEOL structures using inorganic chemical. Micro. 2001;95-106.
3. Thomas D.J., Song Y.P., Powell K. Meeting ITRS roadmap challenges with low-k dielectric etching. Solid State Technology. 2001;107-116.
4. Gadson B., Lassig S., Tran N., Ni T. Top surface imaging improves copper process resolution. Solid State Technology. 2001;77-82.