Transmission electron microscope observations of dislocations in heteroepitaxial layers of CdTe-(CdHg)Te on GaAs

Materials Science and Engineering B

Volumn 45, Issue 1-3, 1997, Pages 76-84

  Patriarche, Gilles ^a,b   Girard François, Armelle ^a   Rivière, Jean Pierre ^a   Castaing, Jacques ^a,c  

^a CNRS   (France)

^b ORANGE LABS   (France)

^c UNIVERSITY OF SEVILLE   (Spain)

Author keywords

Dislocations; Metal organic vapor phase epitaxy; Semiconductors; Transmission electron microscopy

Indexed keywords

DEPOSITION; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

INTERCALATION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031095579     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02012-0     Document Type: Article

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