Internal quantum efficiency of stimulated emission of (λ = 1.55 um) InGaAsP/InP laser diodes

Semiconductors

Volumn 37, Issue 2, 2003, Pages 233-238

  Skrynnikov, G V ^a   Zegrya, G G ^a   Pikhtin, N A ^a   Slipchenko, S O ^a   Shamakhov, V V ^a   Tarasov, I S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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[No Author keywords available]

Indexed keywords

EID: 0037295026     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1548672     Document Type: Article

References (10)

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