Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 494-497

  Moon, Yong Tae ^a   Kim, Dong Joon ^a   Park, Jin Sub ^a   Oh, Jeong Tak ^a   Kim, Yoon Seok ^a   Park, Nae Man ^a   Kim, Baek Hyun ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

B1. Amorphous SiNx; B1. GaN; B1. Nanocrystals; B1. p type Si(1 0 0)

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

SELF-ASSEMBLED NANOSTRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037291778     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01869-9     Document Type: Conference Paper

References (5)

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4. Sze S.M. Physics of Semiconductor Devices. 1981;Wiley, New York.
5. Moon Y.T., Kim D.J., Park J.S., Oh J.T., Lee J.M., Ok Y.W., Kim H., Park S.J. Appl. Phys. Lett. 79:2001;599.