-
2
-
-
6744225835
-
Wafer direct bonding: Tailoring adhesion between brittle materials
-
Amsterdam, Lausanne, New York, Oxford, Shannon, Tokyo: Elsevier
-
Plößl A; Kräuter G (1999) Wafer direct bonding: Tailoring adhesion between brittle materials. Materials Science & Engineering Report (R25). Amsterdam, Lausanne, New York, Oxford, Shannon, Tokyo: Elsevier
-
Materials Science & Engineering Report (R25)
-
-
Plößl, A.1
Kräuter, G.2
-
3
-
-
0026943146
-
Reversible silicon wafer bonding for substrate protection: Water-enhanced debonding
-
Tong Q-T; Gafiteanu R; Gösele U (1992) Reversible silicon wafer bonding for substrate protection: Water-enhanced debonding. J Electrochemical Soc Lett 139: L101-L102
-
(1992)
J Electrochemical Soc Lett
, vol.139
-
-
Tong, Q.-T.1
Gafiteanu, R.2
Gösele, U.3
-
4
-
-
0346943887
-
Concepts of wafer debonding
-
Gutjahr K et al (1998) Concepts of wafer debonding. Electrochemical Soc Proc 97-36: 291-298
-
(1998)
Electrochemical Soc Proc
, vol.97
, Issue.36
, pp. 291-298
-
-
Gutjahr, K.1
-
5
-
-
0346943885
-
Wafer contamination protection by direct wafer bonding and air jet debonding
-
Alexe M; Gösele U (2001) Wafer contamination protection by direct wafer bonding and air jet debonding. Electrochemical Soc Proc 99-35: 195-199
-
(2001)
Electrochemical Soc Proc
, vol.99
, Issue.35
, pp. 195-199
-
-
Alexe, M.1
Gösele, U.2
-
6
-
-
24444442651
-
Separation of bonded wafer and separation device
-
Japanese Patent 07240355A
-
Shinichi T (1995) Separation of bonded wafer and separation device. Japanese Patent 07240355A
-
(1995)
-
-
Shinichi, T.1
-
7
-
-
24444455420
-
Dispositif de décollement de plaquettes et procédé de mise en oeuvre de ce dispositif
-
European Patent EP 0 824 267 A1
-
Laporte P (1998) Dispositif de décollement de plaquettes et procédé de mise en oeuvre de ce dispositif, European Patent EP 0 824 267 A1
-
-
-
Laporte, P.1
-
8
-
-
4243389675
-
Apparatus and methods for wafer debonding using a liquid jet
-
United States Patent 5,863,375
-
Cha G; Lee B (1999) Apparatus and methods for wafer debonding using a liquid jet. United States Patent 5,863,375
-
(1999)
-
-
Cha, G.1
Lee, B.2
-
9
-
-
0348204489
-
Why debonding is useful in SOI
-
Cha G et al (2001) Why debonding is useful in SOI. Electrochemical Soc Proc 99-35: 119-128
-
(2001)
Electrochemical Soc Proc
, vol.99
, Issue.35
, pp. 119-128
-
-
Cha, G.1
-
10
-
-
0030172431
-
Energy-release rate and crack kinking in anisotropic brittle solids
-
Azhdari A; Nemat-Nasser S (1996) Energy-release rate and crack kinking in anisotropic brittle solids. J Mech Phys Solids 44(6): 929-951.
-
(1996)
J Mech Phys Solids
, vol.44
, Issue.6
, pp. 929-951
-
-
Azhdari, A.1
Nemat-Nasser, S.2
-
12
-
-
33745451119
-
Slightly curved or kinked cracks
-
Cotterell B; Rice JR (1980) Slightly curved or kinked cracks. Int J Fracture 16(6): 155-169
-
(1980)
Int J Fracture
, vol.16
, Issue.6
, pp. 155-169
-
-
Cotterell, B.1
Rice, J.R.2
-
13
-
-
0026711757
-
Slightly curved or kinked cracks in anisotropic elastic solids
-
Gao H; Chiu C-H (1992) Slightly curved or kinked cracks in anisotropic elastic solids. Int J Solids Struct 29(8): 947-972
-
(1992)
Int J Solids Struct
, vol.29
, Issue.8
, pp. 947-972
-
-
Gao, H.1
Chiu, C.-H.2
-
14
-
-
24444465699
-
Handling and transferring of thin semiconductor materials
-
German Patent DE 200004359
-
Bagdahn J; Petzold M (2001a) Handling and transferring of thin semiconductor materials. German Patent DE 200004359
-
(2001)
-
-
Bagdahn, J.1
Petzold, M.2
-
15
-
-
0000164243
-
Fatigue of directly wafer-bonded silicon under static and cyclic loading
-
Bagdahn J; Petzold M (2001b) Fatigue of directly wafer-bonded silicon under static and cyclic loading. J Micro System Technol 7(4): 175-182
-
(2001)
J Micro System Technol
, vol.7
, Issue.4
, pp. 175-182
-
-
Bagdahn, J.1
Petzold, M.2
-
17
-
-
85123615747
-
Analysis of stresses and strains near the end of a crack traversing a plate
-
Irwin G (1957) Analysis of stresses and strains near the end of a crack traversing a plate. J Appl Mech 24: 361-364
-
(1957)
J Appl Mech
, vol.24
, pp. 361-364
-
-
Irwin, G.1
-
19
-
-
0000327343
-
Characterization of directly bonded silicon wafers by means of the double cantilever crack opening method
-
Bagdahn J et al (1998) Characterization of directly bonded silicon wafers by means of the double cantilever crack opening method. Electrochem Soc Proc 97-36: 291-298
-
(1998)
Electrochem Soc Proc
, vol.97
, Issue.36
, pp. 291-298
-
-
Bagdahn, J.1
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