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Volumn 9, Issue 3, 2003, Pages 204-209

A new approach for handling and transferring of thin semiconductor materials

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOND STRENGTH (MATERIALS); CRACK PROPAGATION; FRACTURE MECHANICS; INTERFACES (MATERIALS); MATERIALS HANDLING; MICROELECTROMECHANICAL DEVICES; STIFFNESS; TEMPERATURE; WSI CIRCUITS;

EID: 0037283778     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-002-0226-2     Document Type: Article
Times cited : (11)

References (19)
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  • 3
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  • 4
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    • Gutjahr, K.1
  • 5
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    • Wafer contamination protection by direct wafer bonding and air jet debonding
    • Alexe M; Gösele U (2001) Wafer contamination protection by direct wafer bonding and air jet debonding. Electrochemical Soc Proc 99-35: 195-199
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    • Alexe, M.1    Gösele, U.2
  • 6
    • 24444442651 scopus 로고
    • Separation of bonded wafer and separation device
    • Japanese Patent 07240355A
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    • (1995)
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  • 7
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    • European Patent EP 0 824 267 A1
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    • Laporte, P.1
  • 8
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    • United States Patent 5,863,375
    • Cha G; Lee B (1999) Apparatus and methods for wafer debonding using a liquid jet. United States Patent 5,863,375
    • (1999)
    • Cha, G.1    Lee, B.2
  • 9
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    • Why debonding is useful in SOI
    • Cha G et al (2001) Why debonding is useful in SOI. Electrochemical Soc Proc 99-35: 119-128
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.