Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 2, 2003, Pages 416-421

  George, Sajan D ^a   Radhakrishnan, S P ^a   Vallabhan, C P G ^a   Nampoori, V P N ^a  

^a Department of Physics   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; THERMODYNAMIC PROPERTIES; TRANSPORT PROPERTIES;

HEAT TRANSMISSION CONFIGURATION; NONRADIATIVE RECOMBINATION TIME; PHOTOACOUSTIC MEASUREMENT; SURFACE RECOMBINATION VELOCITY; THERMAL DIFFUSIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037281880     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200305943     Document Type: Article

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