Effect of gas pressure on reactive pulsed laser ablation of a silicon target

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 84-86

  Inada, Mitsuru ^a   Umezu, Ikurou ^a   Sugimura, Akira ^a  

^a KONAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; HYDROGENATION; MORPHOLOGY; PARTICLE SIZE ANALYSIS; SILICON; SILICON NITRIDE; SURFACES; SYNTHESIS (CHEMICAL);

GAS PRESSURE; HYDROGENATED SILICON; REACTIVE PULSED LASER ABLATION;

LASER ABLATION;

EID: 0037276289     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1527898     Document Type: Article

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