Advanced materials and structures for high power wide bandgap devices

Annual IEEE Semiconductor Thermal Measurement and Management Symposium

Volumn , Issue , 2003, Pages 42-47

  Shaddock, David ^a   Meyer, Laura ^a   Tucker, Jesse ^a   Dasgupta, Samhita ^a   Fillion, Raymond ^a   Bronecke, Peter ^b   Yorinks, Leonard ^b   Kraft, Phillip ^b  

^a GE GLOBAL RESEARCH   (United States)

^b Lockheed Martin NESS   (United States)

Author keywords

Packaging; SiC; Silicon carbide; Wide bandgap

Indexed keywords

CARRIER CONCENTRATION; ELECTRONICS PACKAGING; HEAT TRANSFER; HIGH TEMPERATURE OPERATIONS; MESFET DEVICES; MICROWAVE DEVICES; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY; CHIP SCALE PACKAGES; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM NITRIDE; PHOTONIC BAND GAP; SEMICONDUCTOR DEVICES; TEMPERATURE DISTRIBUTION; THERMAL VARIABLES MEASUREMENT;

OPTOELECTRONIC PACKAGING; SEMI-INSULATING SILICON CARBIDE; WIDE BANDGAP DEVICE;

ENERGY GAP; ELECTRONICS PACKAGING;

ADVANCED MATERIALS; CONDUCTING MATERIALS; HIGH TEMPERATURE DEVICE; HIGH-POWER DEVICES; OPTOELECTRONIC PACKAGING; SEMICONDUCTOR DEVICE PACKAGING; TEMPERATURE DEPENDENCE; THERMAL PERFORMANCE;

EID: 0037272299     PISSN: 10652221     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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