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Volumn 41, Issue 5, 2003, Pages 967-972

An ellipsometric analysis of CVD-diamond films at infrared wavelengths

Author keywords

A. Diamond; B. Chemical vapor deposition; C. Ellipsometry; D. Optical properties

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; INFRARED RADIATION; INTERFACES (MATERIALS); OPTICAL PROPERTIES; SILICON; SUBSTRATES; SURFACE ROUGHNESS; VOLUME FRACTION;

EID: 0037261517     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(02)00419-0     Document Type: Article
Times cited : (9)

References (8)
  • 2
    • 0022665008 scopus 로고
    • Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces
    • McMarr P.J., Vedam K., Narayan J. Spectroscopic ellipsometry: a new tool for nondestructive depth profiling and characterization of interfaces. Appl Phys Lett. 59:(3):1986;694-701.
    • (1986) Appl Phys Lett , vol.59 , Issue.3 , pp. 694-701
    • McMarr, P.J.1    Vedam, K.2    Narayan, J.3
  • 3
    • 0030384371 scopus 로고
    • The calculation of thin film parameters from spectroscopic ellipsometry data
    • Jellison G.E. The calculation of thin film parameters from spectroscopic ellipsometry data. Thin Solid Films. 290-291:1990;40-45.
    • (1990) Thin Solid Films , vol.290-291 , pp. 40-45
    • Jellison, G.E.1
  • 4
    • 17144468598 scopus 로고    scopus 로고
    • Application of real-time spectroscopic ellipsometry for the development of low-temperature diamond film growth processes
    • Collins R.W., Lee J.C. Application of real-time spectroscopic ellipsometry for the development of low-temperature diamond film growth processes. Thin Solid Films. 313-314:1998;506-510.
    • (1998) Thin Solid Films , vol.313-314 , pp. 506-510
    • Collins, R.W.1    Lee, J.C.2
  • 5
    • 0037013655 scopus 로고    scopus 로고
    • A new quantitative determination of stress by Raman spectroscopy in diamond grown on alumina
    • Fang Z., Xia Y. A new quantitative determination of stress by Raman spectroscopy in diamond grown on alumina. J Phys: Condensed Matter. 14:2002;5271-5276.
    • (2002) J Phys: Condensed Matter , vol.14 , pp. 5271-5276
    • Fang, Z.1    Xia, Y.2
  • 8
    • 0024087851 scopus 로고
    • Characterization of thin films and materials used in semiconductor technology by spectroscopic ellipsometry
    • Ferrieu F., Lecat J.H. Characterization of thin films and materials used in semiconductor technology by spectroscopic ellipsometry. Thin Solid Films. 164:1988;43-50.
    • (1988) Thin Solid Films , vol.164 , pp. 43-50
    • Ferrieu, F.1    Lecat, J.H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.