An experimental study of charge diffusion in the undepleted silicon of X-ray CCDs

IEEE Transactions on Electron Devices

Volumn 50, Issue 1, 2003, Pages 246-253

  Prigozhin, Gregory ^a   Butler, Nathaniel R ^a   Kissel, Steve E ^a   Ricker, George R ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge diffusion; Charge coupled device; Diffusion length; X rays

Indexed keywords

CHARGE CARRIERS; PHOTONS; SENSITIVITY ANALYSIS; SIGNAL TO NOISE RATIO; SILICON; X RAY OPTICS; X RAY SPECTROSCOPY;

CHARGE CLOUDS; CHARGE DIFFUSION; X RAY PHOTONS;

CHARGE COUPLED DEVICES;

EID: 0037252927     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.806470     Document Type: Article

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