The depletion depth of high resistivity x-ray ccds

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 1, 1998, Pages 903-909

  Prigozhin, G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRIC CONDUCTIVITY; ELECTRON DEVICE MANUFACTURE; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SPECTROMETERS; X RAYS;

CAPACITANCE VOLTAGE TECHNIQUE; X RAY CHARGE COUPLED DEVICES;

CHARGE COUPLED DEVICES;

EID: 0032098096     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682658     Document Type: Article

References (6)

1. M. Weisskopf, S. O'Dell, R. Eisner and L. Van Speybrock, "Advanced X-ray Astrophysics Facility (AXAF) - An overview", Proc. SPIE, vol. 2515, pp. 312-329, July 1995.
2. D. Lumb, H. Eggel, R. Laine, A. Peacock, "X-ray MultiMirror Mission - an overview", Proc. SPIE, vol. 2808, pp. 326-337, August 1996
3. B. Burke, J. Gregory, M. Bautz, G. Prigozhin, S. Kissel, B. Kosicki, A. Loomis, D. Young, Soft X-ray Imagers for AXAF, IEEE Transactions on Electron Devices, vol. 44, No. 10, p. 1633, October 1997
4. J. Bakker, "Simple Analytical Expression for the Fringing Field and Fringing-Field Induced Transfer Time in Charge Coupled Devices", IEEE Transactions on Electron Devices, vol. 38, No. 5, p. 1152, May 1991
5. G. R. Hopkinson, "Analytic modeling of charge diffusion in charge-coupled-device imagers", Optical engineering, vol. 26, No. 8, pp. 766-772
6. J. Janesick, J. Hynecek, M. Blouke, "Virtual phase imager for Galileo", Proc. SPIE, vol 290, pp. 165-173,1981