A method of normalizing cathodoluminescence images of electron transparent foils for thickness contrast applied to InGaN quantum wells

Journal of Microscopy

Volumn 209, Issue 1, 2003, Pages 41-46

  Boyall, N M ^a   Durose, K ^a   Watson, I M ^b  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

Cathodoluminescence; InGaN quantum wells; Thickness normalization; Transmission electron microscopy

Indexed keywords

ELECTRONS; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ALLOYS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

CATHODOLUMINESCENCE IMAGES; CATHODOLUMINESCENCE INTENSITY; DEPTH DOSE; ELECTRON INTENSITY; FOIL THICKNESS; GAN-QUANTUM WELLS; INGAN QUANTUM WELLS; NORMALISATION; THICKNESS NORMALIZATION; TRANSMISSION ELECTRON;

CATHODOLUMINESCENCE;

NITROGEN DERIVATIVE;

ARTICLE; CALCULATION; CALIBRATION; ELECTRON; FOIL; LUMINESCENCE; PRIORITY JOURNAL; QUANTUM CHEMISTRY; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0037238329     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2003.01099.x     Document Type: Article

References (15)

1. Albrecht, M., Grillo, V., Borysiuk, J., Remmele, T., Strunk, H.P., Walther, T., Mader, W., Prystawko, P., Leszczynski, M., Grzegory, I. & Porowski, S. (2001) Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy. Inst. Phys. Conf. Ser. (Microsc. Semicond. Mater. Conf), 169, 267-272.
2. Binet, F., Duboz, J.Y., Grattepain, C., Scholz, F. & Off, J. (1999) Carrier capture in InGaN quantum wells and hot carrier effects in GaN. Mater. Sci. Eng. B, 59, 323-329.
3. Chen, H., Feenstra, R.M., Northrup, J., Neugebauer, J. & Greve, D.W. (2001) Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory. MRS Internet J. Nitride Semicond. Res. 6 (11).
4. Cremades, A., Piqueras, J., Albrecht, M., Stutzmann, M. & Strunk, H.P. (2001) Study of structural defects limiting the luminescence of InGaN single quantum wells. Mater. Sci. Eng. B, 80, 313-317.
5. Everhart, T.E. & Hoff, P.H. (1971) Determination of kilovolt electron energy dissipation vs penetration distance in solid materials. J. Appl. Phys. 42, 5837-5846.
6. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W. & Whelan, M.J. (1965) Electron Microscopy of Thin Crystals. Spottiswoode, Ballantyne & Co Ltd, London.
7. Kanaya, K. & Okayama, S. (1972) Penetration and energy-loss theory of electron in solid targets. J. Phys. D Appl. Phys. 5, 43-58.
8. Martin, R.W., Edwards, P.R., Pecharroman-Gallego, R., Liu, C., Deatcher, C.J., Watson, I.M. & O'Donnell, K.P. (2002) Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells. J. Phys. D Appl. Phys. 35, 604-608.
9. Pennycook, S.J., Craven, A.J. & Brown, L.M. (1977) Cathodoluminescence on a scanning transmission electron microscope. Inst. Phys. Conf. Ser. (Electron Microsc. Anal.), 36, 69-72.
10. Pereira, S., Correia, M.R., Pereira, E., O'Donnell, K.P., Trager-Cowan, C., Sweeney, F., Alves, E., Sequeira, A.D., Franco, N. & Watson, I.M. (2001) Depth resolved studies of Indium content and strain in InGaN layers. Phys. Stat. Sol. (B), 228, 59-64.
11. Petroff, P.M., Logan, R.A. & Savage, A. (1980) Nonradiative recombination at dislocations in III-V compound semiconductors. Phys. Rev. Lett. 44, 287-291.
12. Reimer, L. (1984) Transmission Electron Microscopy, Physics of Image Formation and Microanalysis. Springer-Verlag, Heidelberg.
13. Roosbroeck, W.V. (1955) Injected current carrier transport in a semi-infinite semiconductor and the determination of lifetimes and surface recombination velocities. J. Appl. Phys. 26, 380-391.
14. Yacobi, B.G. & Holt, D.B. (1986) Cathodoluminescence scanning electron microscopy of semiconductors. J. Appl. Phys. 59, R1-R24.
15. Yacobi, B.G. & Holt, D.B. (1990) Cathodoluminescence Microscopy of Inorganic Solids. Plenum Press, New York.