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Volumn 86, Issue 1, 2003, Pages 73-76

Fabrication of new cemented carbide containing diamond coated with nanometer-sized SiC particles

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; DIAMONDS; ELECTRIC CURRENTS; FRACTURE TOUGHNESS; NANOSTRUCTURED MATERIALS; OXIDATION RESISTANCE; POLYCRYSTALLINE MATERIALS; POWDERS; SILICON CARBIDE; SILICONE COATINGS; SINTERING; THERMAL EFFECTS;

EID: 0037231948     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2003.tb03280.x     Document Type: Article
Times cited : (27)

References (12)
  • 1
    • 0001703878 scopus 로고
    • Sintered diamond compacts with a cobalt binder
    • H. Katzman and L. L. Libby, "Sintered Diamond Compacts with a Cobalt Binder," Science, 172, 1132-34(1971).
    • (1971) Science , vol.172 , pp. 1132-1134
    • Katzman, H.1    Libby, L.L.2
  • 4
    • 0033907182 scopus 로고    scopus 로고
    • Very rapid densification of nanometer silicon carbide powder by pulse electric current sintering
    • Y. Zhou, K. Hirao, M. Toriyama, and H. Tanaka, "Very Rapid Densification of Nanometer Silicon Carbide Powder by Pulse Electric Current Sintering," J. Am. Ceram. Soc., 83, 654-56 (2000).
    • (2000) J. Am. Ceram. Soc. , vol.83 , pp. 654-656
    • Zhou, Y.1    Hirao, K.2    Toriyama, M.3    Tanaka, H.4
  • 5
    • 0000738741 scopus 로고
    • Fracture toughness determinations by indentation
    • A. G. Evans and E. A. Charles, "Fracture Toughness Determinations by Indentation," J. Am. Ceram. Soc., 59, 371-72 (1976).
    • (1976) J. Am. Ceram. Soc. , vol.59 , pp. 371-372
    • Evans, A.G.1    Charles, E.A.2
  • 6
    • 0032594124 scopus 로고    scopus 로고
    • Growth of epitaxial β-sic films using solid graphite and silicon sources
    • H. K. Woo, C. S. Lee, I. Bello, and S. T. Lee, "Growth of Epitaxial β-SiC Films Using Solid Graphite and Silicon Sources," Diamond Relat. Mater., 8, 1737-40 (1999).
    • (1999) Diamond Relat. Mater. , vol.8 , pp. 1737-1740
    • Woo, H.K.1    Lee, C.S.2    Bello, I.3    Lee, S.T.4
  • 8
    • 0028731053 scopus 로고
    • 2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces
    • 2-SiC Interfaces and Oxidation of 6H SiC Single Crystal Si-(001) and C-(001) Surfaces," J. Mater. Res., 9, 3088-94 (1994).
    • (1994) J. Mater. Res. , vol.9 , pp. 3088-3094
    • Hornetz, B.1    Michel, H.-J.2    Halbritter, J.3
  • 9
    • 0031672146 scopus 로고    scopus 로고
    • A theoretical and experimental approach to the active-to-passive transition in the oxidation of silicon carbide
    • B. Schneider, A. Guetter, R. Naslain, M. Cataldi, and A. Costecalde, "A Theoretical and Experimental Approach to the Active-to-Passive Transition in the Oxidation of Silicon Carbide," J. Mater. Sci., 33, 535-47 (1998).
    • (1998) J. Mater. Sci. , vol.33 , pp. 535-547
    • Schneider, B.1    Guetter, A.2    Naslain, R.3    Cataldi, M.4    Costecalde, A.5
  • 11
    • 0034949903 scopus 로고    scopus 로고
    • Materials science of cemented carbides: An overview
    • G. S. Upadhyaya, "Materials Science of Cemented Carbides: An Overview," Mater. Des., 22, 483-89 (2001).
    • (2001) Mater. Des. , vol.22 , pp. 483-489
    • Upadhyaya, G.S.1
  • 12
    • 0020737666 scopus 로고
    • Crack deflection process - I. Theory, and II. Experiment
    • K. T. Faber and A. G. Evans, "Crack Deflection Process - I. Theory, and II. Experiment," Acta Metall., 31, 565-84 (1983).
    • (1983) Acta Metall. , vol.31 , pp. 565-584
    • Faber, K.T.1    Evans, A.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.