Fabrication of new cemented carbide containing diamond coated with nanometer-sized SiC particles

Journal of the American Ceramic Society

Volumn 86, Issue 1, 2003, Pages 73-76

  Miyamoto, Yoshinari ^a   Kashiwagi, Takehiko ^a   Hirota, Ken ^b   Yamaguchi, Osamu ^b   Moriguchi, Hideki ^c   Tsuduki, Katsunori ^c   Ikegaya, Akihiko ^c  

^a OSAKA UNIVERSITY   (Japan)

^b DOSHISHA UNIVERSITY   (Japan)

^c SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK PROPAGATION; DIAMONDS; ELECTRIC CURRENTS; FRACTURE TOUGHNESS; NANOSTRUCTURED MATERIALS; OXIDATION RESISTANCE; POLYCRYSTALLINE MATERIALS; POWDERS; SILICON CARBIDE; SILICONE COATINGS; SINTERING; THERMAL EFFECTS;

PULSED-ELECTRIC-CURRENT SINTERING;

COATINGS;

EID: 0037231948     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2003.tb03280.x     Document Type: Article

References (12)

1. H. Katzman and L. L. Libby, "Sintered Diamond Compacts with a Cobalt Binder," Science, 172, 1132-34(1971).
2. K. Higuchi, M. Sato, and T. Nakano, "Diamond Abrasives, Grinders, and Manufacturing Method There of," Jpn. Pat. No. 3119098, Oct. 13, 2000.
3. Y. Miyamoto, J. Lin, Y. Yamashita, T. Kashiwagi, O. Yamaguchi, H. Moriguchi, and A. Ikegaya, "Reactive Coating of SiC on Diamond Particles." Ceram. Eng. Sci. Proc., 21 [4] 185-92 (2000).
4. Y. Zhou, K. Hirao, M. Toriyama, and H. Tanaka, "Very Rapid Densification of Nanometer Silicon Carbide Powder by Pulse Electric Current Sintering," J. Am. Ceram. Soc., 83, 654-56 (2000).
5. A. G. Evans and E. A. Charles, "Fracture Toughness Determinations by Indentation," J. Am. Ceram. Soc., 59, 371-72 (1976).
6. H. K. Woo, C. S. Lee, I. Bello, and S. T. Lee, "Growth of Epitaxial β-SiC Films Using Solid Graphite and Silicon Sources," Diamond Relat. Mater., 8, 1737-40 (1999).
7. 4/SiC Nanocomposite Using the XPS Differential Charge Effect," J. Electron Spectrosc. Relat. Phenom., 109, 241-48 (2000).
8. 2-SiC Interfaces and Oxidation of 6H SiC Single Crystal Si-(001) and C-(001) Surfaces," J. Mater. Res., 9, 3088-94 (1994).
9. B. Schneider, A. Guetter, R. Naslain, M. Cataldi, and A. Costecalde, "A Theoretical and Experimental Approach to the Active-to-Passive Transition in the Oxidation of Silicon Carbide," J. Mater. Sci., 33, 535-47 (1998).
10. Y. S. Touloukian, R. K. Kirby, R. E. Taylor, and T. Y. R. Lee, p. 19 in Thermophysical Properties of Matter, Vol. 13, Thermal Expansion. IFI/Plenum, New York, 1977.
11. G. S. Upadhyaya, "Materials Science of Cemented Carbides: An Overview," Mater. Des., 22, 483-89 (2001).
12. K. T. Faber and A. G. Evans, "Crack Deflection Process - I. Theory, and II. Experiment," Acta Metall., 31, 565-84 (1983).