Terahertz optical properties of thin doped contact layers in GaAs device structures

Semiconductor Science and Technology

Volumn 18, Issue 1, 2003, Pages 28-32

  Bauer, Tobias ^a   Kolb, Johanna S ^a   Mohler, Ernst ^a   Roskos, Hartmut G ^a   Köhler, Klaus ^b  

^a GOETHE UNIVERSITY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COUPLINGS; ELECTRIC CONDUCTIVITY; OPTIMIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

THIN DOPED CONTACT LAYERS;

THIN FILMS;

EID: 0037231098     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/1/304     Document Type: Article

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