Electron density distribution in GaAs using MEM

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 1, 2003, Pages 51-58

  Saravanan, Ramachandran ^a   Ono, Yasuhiro ^a   Isshiki, Minoru ^a   Ohno, Kahoru ^b   Kajitani, Tsuyoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A. Inorganic compounds; C. X ray diffraction; D. Electrical properties

Indexed keywords

CARRIER CONCENTRATION; ENTROPY; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

MAXIMUM ENTROPY METHOD (MEM);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037213147     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(02)00209-3     Document Type: Article

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