New type of defects related to nonuniform distribution of compensating centers in p-GaN films

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 51-56

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Shmidt, N M ^b   Pearton, S J ^c   Osinsky, A V ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF FLORIDA   (United States)

^d Corning Applied Technologies ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; GALLIUM NITRIDE; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING;

HOLE CONCENTRATION;

SEMICONDUCTING FILMS;

EID: 0037211139     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00279-4     Document Type: Article

References (11)

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8. Schottky diodes.
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