Low noise photosensitive device structures based on porous silicon

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 65-69

  Balagurov, L A ^a   Bayliss, S C ^b   Yarkin, D G ^a   Andrushin, S Ya ^a   Kasatochkin, V S ^a   Orlov, A F ^a   Petrova, E A ^a  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Photodetector; Photosensitivity; Porous silicon

Indexed keywords

ANTIREFLECTION COATINGS; BIPOLAR TRANSISTORS; FABRICATION; PHOTODETECTORS; PHOTODIODES; PHOTOSENSITIVITY; PHOTOTRANSISTORS; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

OPTICAL WINDOWS;

POROUS SILICON;

EID: 0037210929     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00308-8     Document Type: Article

References (11)

1. Canham L.T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57:1990;1046-1048.
2. Zheng J.P., Jiao K.L., Shen W.P., Anderson W.A., Kwok H.S. Highly sensitive photodetector using porous silicon. Appl. Phys. Lett. 61:1992;459-461.
3. Tsai C., Li K.H., Campbell J.C., Tasch A.L. Photodetectors fabricated from rapid thermal oxidized porous silicon. Appl. Phys. Lett. 62:1993;2818-2820.
4. Balagurov L.A., Bayliss S.C., Andrushin S.Ya, Orlov A.F., Unal B., Yarkin D.G.et al. Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon. Solid-State Electron. 45:2001;1607-1611.
5. Balagurov L.A., Yarkin D.G., Petrova E.A., Orlov A.F., Andrushin S.Ya. Highly sensitive porous silicon based photodiode structures. J. Appl. Phys. 82:1997;4647-4650.
6. Lee M.K., Tseng Y.C., Chu C.H. A high gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing. Appl. Phys. A. 67:1998;541-543.
7. Balagurov L.A., Bayliss S.C., Kasatochkin V.S., Petrova E.A., Unal B., Yarkin D.G. Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon. J. Appl. Phys. 90:2001;4543-4548.
8. Willardson R.K., Beer A.C., editors. Lightwave communications technology, Semiconductors and semimetals, vol. 22, Part D: Photodetectors. New York: Academic Press; 1985.
9. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;Wiley, New York.
10. Pulsford N.J., Rikken G.L.J.A., Kessener Y.A.R.R., Lous E.J., Venhuizen A.H.J. Behavior of a rectifying junction at the interface between porous silicon and its substrate. J. Appl. Phys. 75:1994;636-638.
11. Milns A.G., Feucht D.L. Heterojunctions and metal-semiconductor junctions. 1972;Academic Press, New York.