A high-gain porous silicon metal-semiconductor-metal photodetector through rapid thermal oxidation and rapid thermal annealing

Applied Physics A: Materials Science and Processing

Volumn 67, Issue 5, 1998, Pages 541-543

  Lee, M K ^a   Tseng, Y C ^a   Chu, C H ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PHOTOCURRENTS; POROUS SILICON; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SILICON WAFERS; THERMOOXIDATION;

METAL SEMICONDUCTOR METAL PHOTODETECTOR; RAPID THERMAL OXIDATION;

PHOTODETECTORS;

EID: 0032203632     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050818     Document Type: Article

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