Behavior of the solid-state field-controlled planar emitters under extreme working conditions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 474-478

  Binh, Vu Thien ^a   Semet, V ^a   Dupin, J P ^a   Adessi, Ch ^a,b   Guillot, D ^a  

^a UNIVERSITÉ LYON 1   (France)

^b UNIVERSITÉ DE FRANCHE COMTÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FIELD EMISSION CATHODES; POISSON EQUATION; SPECTROMETERS; SUBSTRATES; ULTRATHIN FILMS;

LOW ELECTRON AFFINITY SURFACE; SOLID STATE FIELD CONTROLLED PLANAR EMITTERS; ULTRATHIN WIDE BAND GAP SEMICONDUCTOR;

SOLID STATE DEVICES;

EID: 0037207746     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1540985     Document Type: Article

References (12)

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