Emission site control in carbon nanotube field emitters by focused ion and laser irradiation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 362-365

  Sawada, A ^a   Iriguchi, M ^a   Zhao, W J ^a   Ochiai, C ^a   Takai, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; INDIUM COMPOUNDS; ION BEAMS; ION BOMBARDMENT; LASER BEAMS; LIGHT EMISSION; MELTING; SCANNING ELECTRON MICROSCOPY; SOLID STATE LASERS;

DANGLING BOND; FIELD EMISSION DISPLAY; FIELD EMITTER; FOCUSED ION BEAM; INDIUM TIN OXIDE; LASER IRRADIATION; NEODYMIUM DOPED YTTRIUM FLUORIDE LASER;

CARBON NANOTUBES;

EID: 0037207733     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1527597     Document Type: Article

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