SCOPUS 정보 검색 플랫폼

Volumn 91-92, Issue , 2002, Pages 476-480

Measurement of mounting-induced strain and defects in high-power laser diodes using Fourier-transform photo-current spectroscopy

(6) Gerhardt, A a Tomm, J W a Muller R a Barwolff A a Lorenzen, D b Donecker, J c

a MAX BORN INSTITUT (Germany)

b JENOPTIK Laserdiode GmbH (Germany)

c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

AlGaAs; Defect concentration; Defects; Device packaging; GaAs; InAlGaAs; Photo current; Photo current spectroscopy; Quantum well; Strain

Indexed keywords

DEFECTS; ELECTRONICS PACKAGING; FOURIER TRANSFORMS; PHOTOCURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; STRAIN MEASUREMENT;

PHOTO-CURRENT SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 0037197508 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01007-8 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.