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Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 100-104

Characterisation of bulk crystals and structures by light-induced transient grating technique

(2) Jarasiunas, K a Lovergine, N b

a VILNIUS UNIVERSITY (Lithuania)

b INFM (Italy)

Author keywords

Bulk crystals; GaAs; Light diffraction

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; DIFFRACTION GRATINGS; DIFFUSION IN SOLIDS; FOUR WAVE MIXING; HETEROJUNCTIONS; INTERFACES (MATERIALS); LASER BEAM EFFECTS; LIGHT INTERFERENCE; POINT DEFECTS; REFRACTIVE INDEX; SUBSTRATES;

BULK CRYSTALS; CARRIER LIFETIMES; LIGHT-INDUCED TRANSIENT FREE-CARRIER (FC) GRATINGS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037197486 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00982-5 Document Type: Conference Paper

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.